2013 1(12)

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Pages:

178 - 183

Language:

RU

Ref.:

15


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GAS-DYNAMIC AND THERMAL PROCESSES IN SYNTHESIS OF TRICHLOROSILANE, HYDROGEN REDUCTION OF SILICON TETRACHLORIDE IN AN RF DISCHARGE

Gusev A.V., Kornev R.A., Shaposhnikov V.A.

G.G.Devyatykh Institute of Chemistry of High-Purity Substances RAS, Nizhniy Novgorod, Russia


Citation:

Gusev A.V. Gas-dynamic and thermal processes in synthesis of trichlorosilane, hydrogen reduction of silicon tetrachloride in an rf discharge / A.V. Gusev, R.A. Kornev, V.A. Shaposhnikov // Modern Science: Researches, Ideas, Results, Technologies. - Dnepropetrovsk: SPIC "Triacon". - 2013. - Iss. #1(12). - PP. 178 - 183


Keywords:

plasma chemical synthesis; simulation; gas dynamics; heat transfer


Abstracts:

The results of numerical simulation of gas dynamics and heat transfer processes in the problem of plasma chemical synthesis of trichlorosilane in the HF discharge. The studies were conducted to obtain of trichlorosilane using advanced computational fluid dynamics techniques, allowing detail of the velocity field and temperature, mass flow of gas in the plasma region, and to determine the temperature range of the reaction zone between 900 - 1760K and hit ratio of the gas mixture in plasma region.


References:

  1. Grankov I.V., Zakharov - Cherenkov V.K., Ivanov L.S., Sivoshinskaya T.I. (1983), Proizvodstvo poluprovodnikovogo kremniya za rubezhom [Production of silicon semiconductor abroad], TSNIItsvetmet ekonomiki i informatsii, Moscow, Russia.

  2. Rusanov V.D., Fridman A.A. (1984), Fizika khimicheski aktivnoi plazmi [Physics of chemically active plasma], Nauka, Moscow, Russia.

  3. Karpov A.P., Suris A.L., Shorin S.N. (1975), "Thermodynamic analysis of the processes of recovery of chlorides". Proceedings of the 2th International Symposium on Plasma Chemistry Volume 2, Riga, 1975, pp. 178181.

  4. Sarma K.R., Chanley C.S. Способ гидрирования тетрахлорида кремния. Патент 4542004 США, 1985. Sarma K.R., Rice jr.M.J. (1985) Sposob gidrirovaniya tetrakhlorida kremniya [Process for the hydrogenation of silicon tetrachloride], United States Patent 4542004.

  5. Rayzer YU.P. (1987) Fizika gazovogo razryada [Physics of gas discharge], Nauka, Moscow, Russia.

  6. Gusev A.V., Kornev R.A., Sukhanov A.YU. (2006), "Obtaining trichlorosilane by plasma hydrogenation of silicon tetrachloride", Neorganicheskie materiali, Vol. 42 No. 9, pp. 1123 - 1126.

  7. Krasheninnikov E.G., Rusanov V.D., Sanyuk S.V., Fridman A.A, "Dissociation hydrogen sulfide in RF discharge", Zhurnal Tekhnicheskoi Fiziki, Vol. 56.

  8. Krilov V.A., Salganskii YU.M., Chernova O.YU. (2001) , "Highly sensitive gas chromatographic determination of impurities of carbon-and hydrogencontaining substances in silicon tetrachloride', Zhurnal Analiticheskoi Khimii, Vol. 56 No. 9, pp. 956 - 961.

  9. Sarma K.R., Rice jr.M.J. Способ гидрирования тетрахлорида кремния. Патент 4309259 США, 1982. Sarma K.R., Rice jr.M.J. (1982) Sposob gidrirovaniya tetrakhlorida kremniya [Process for the hydrogenation of silicon tetrachloride], United States Patent 4309259.

  10. Wolf Е. und Teichmann R. (1980). Zur Thermodynamik des Systems Si - Cl - H //Z. anorg. allg. Chem. 460, pp. 65 - 80.

  11. Sirtl E., Hunt L.P., and Sawyer D.H. (1974) "High Temperature Reactions in the Silicon - Hydrogen - Chlorine System", Journal of The Electrochemical Society, Vol. 121 No. 7.

  12. Furman A.A. Neorganicheskie khloridy [Inorganic chlorides], Khimiya, Moscow, Russia.

  13. Rabinovich V.A., Khavin Z.YA. (1991), Kratkii khimicheskii spravochnik [Concise guide chemical], Khimiya, Leningrad, Russia.

  14. Nigmatulin R.I. Dinamika mnogofaznykh sred. Chast.1. - M: Nauka, Glav. izd.f.-m. lit-ry, 1987. - 464 PP.

  15. Sivoshkinskaya T.S., Grankov I.V., Shabalin YU.P., Ivanov L.S. (1989), Pererabotka tetrakhorida kremniya, obrazuyushchegosya v proizvodstve poluprovodnikovogo kremniya [Processing of silicon tetrachloride formed in manufacture of semiconductor silicon], TSNIItsvetmet ekonomiki i informatsii, Moskow, Russia.

 

 
     

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