2013 1(12)

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171 - 177

Language:

RU

Ref.:

16


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MODELING OF GAS DYNAMIC AND THERMAL PHENOMENA IN PLASMA-CHEMICAL CONVERSION SICL4 IN A MICROWAVE DISCHARGE

Gusev A.V., Kornev R.A., Shaposhnikov V.A.

G.G.Devyatykh Institute of Chemistry of High-Purity Substances RAS, Nizhniy Novgorod, Russia


Citation:

Gusev A.V. Modeling of gas dynamic and thermal phenomena in plasma-chemical conversion SiCl4 in a microwave discharge / A.V. Gusev, R.A. Kornev, V.A. Shaposhnikov // Modern Science: Researches, Ideas, Results, Technologies. - Dnepropetrovsk: SPIC "Triacon". - 2013. - Iss. #1(12). - PP. 171 - 177


Keywords:

plasma-chemical conversion; numerical simulation; gas dynamics; heat transfer


Abstracts:

The results of numerical simulation of gas dynamics and heat transfer processes in the problem of plasma-chemical conversion of silicon tetrachloride in a microwave discharge (2.45 GHz) at a pressure of 6.65 kPa (50 Torr). Research carried out for the optimal conditions for producing silicon using advanced computational fluid dynamics technology, making it possible to detail velocity field and temperature, mass flow of gas in the plasma region, and determine the temperature range of the reaction zone between 2000 - 2500K and residence time of reagents in the reaction zone t = 6 • 10-3s.


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